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BR10005S 15041452 MS8GE F2060 DF150 78L12 1A220 OZ8022
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 60 50
60 10V 50 Vds=5V 4.0V 40
40
Id (A)
Id(A)
30 3.5V 20 10 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics Vgs=3V
30 20 10 0 1.5 2 2.5
125C
25C
3
3.5
4
4.5
Vgs(Volts) Figure 2: Transfer Characteristics
8 Vgs=4.5V
1.6
Normalized On-Resistance
7
Id=20A 1.4 Vgs=4.5V 1.2 Vgs=10V 1
Rds(on) (m:)
6 5 4 3 2 0 10 20 30 40 50 60 Vgs=10V
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
9
1.0E+02 1.0E+01
125C
7.5 125C
1.0E+00
Rds(on) (m:)
Is (A)
1.0E-01 25C 1.0E-02 1.0E-03
6 Id=20A 4.5 25C 3 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics
10 8 Vds=15V Id=20A
5000
4000
6 4 2 0 0 10 20 30 40 50 60 70 Qg (nC) Figure 7: Gate-Charge Characteristics
Capacitance (pF)
Ciss 3000
Vgs (Volts)
2000 Coss 1000 Crss 0 0 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30
100.0 Rds(on) limited 10ms 10.0 100Ps 1ms 10Ps
100 80 Tj(max)=150C Ta=25C
Power (W)
Id (Amps)
0.1s 1s 10s
60 40 20 0 0.001
1.0 Tj(max)=150C Ta=25C 0.1 0.1 1
DC
10 Vds (Volts)
100
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
10
ZTja Normalized Transient Thermal Resistance
D=T on/T Tj,pk=T a+Pdm.ZTja.RTja RTja=40C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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